 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES * The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz * PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz * OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz * Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz * SiGe HBT technology (UHS2) : fT = 15.5 GHz * 3-pin minimold (33 PKG) ORDERING INFORMATION Part Number NESG210833 Order Number NESG210833-A Package 3-pin minimold (33 PKG) (Pb-Free) NESG210833-T1B NESG210833-T1B-A Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form * 8 mm wide embossed taping * Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Base Current Note 1 Symbol VCBO VCES VCEO IB IC Ptot Note 2 Ratings 5.5 13 5.5 36 100 480 150 -65 to +150 Unit V V V mA mA mW C C Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tj Tstg Notes 1. Depend on the ESD protect device. 2. Mounted on 3.8 cm x 9.0 cm x0.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PU10765EJ02V0DS (2nd edition) Date Published November 2009 NS Printed in Japan The mark 2009 The revised points can be easily searched by copying an " NESG210833 THERMAL RESISTANCE (TA = +25C) Parameter Symbol Rthj-a Ratings 260 Unit C/W Termal Resistance from Junction to Ambient Note Note Mounted on 3.8 cm x 9.0 cm x 0.8 mm (t) glass epoxy PWB ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure (1) fT S21e NF1 2 Symbol Test Conditions MIN. TYP. MAX. Unit ICBO IEBO hFE Cre Note 1 VCB = 5 V, IE = 0 mA VEB = 0.4 V, IC = 0 mA VCE = 5 V, IC = 5 mA VCB = 5 V, IE = 0 mA, f = 1 MHz - - 140 - - - 180 0.5 100 100 260 0.7 nA nA - pF Note 2 VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 5 V, IC = 5 mA, f = 1 GHz, ZS = ZSopt, ZL = 50 VCE = 5 V, IC = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt VCE = 5 V, IC = 30 mA, f = 1 GHz VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, ZS = ZSopt, ZL = ZLopt - 12.5 - - 11 - 14 - - 15.5 14.5 0.7 - - 1.1 - - - - - - GHz dB dB Noise Figure (2) Associated Gain (1) Associated Gain (2) Maximum Stable Power Gain Gain 1 dB Compression Output Power Output 3rd Order Intercept Point NF2 Ga1 Ga2 MSG Note 3 0.9 13 14.5 16 18.5 dB dB dB dB dBm PO (1 dB) OIP3 VCE = 5 V, IC (set) = 30 mA, f = 1 GHz, 31 dBm f = 1 MHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded. 3. MSG = S21 S12 hFE CLASSIFICATION Rank Marking hFE Value FB R7C 140 to 260 2 Data Sheet PU10765EJ02V0DS NESG210833 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 1 000 0.8 f = 1 MHz 0.7 0.6 0.5 0.4 0.3 0.2 0 3.8 cm x 9.0 cm x 0.8mm (t), FR-4 500 480 0 0 25 50 75 100 125 150 1 2 3 4 5 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V Collector Current IC (mA) Collector Current IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 5 V 10 1 0.1 0.01 0.001 10 1 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 0.0001 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 1 000 A 900 A 800 A 700 A 600 A 500 A 400 A 40 300 A 200 A 20 IB = 100 A 0 0 1 2 3 4 5 Collector Current IC (mA) 80 60 Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. Data Sheet PU10765EJ02V0DS 3 NESG210833 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 VCE = 3 V 1 000 VCE = 5 V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain hFE DC Current Gain hFE 100 100 10 10 1 0.1 1 10 100 1 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 20 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) VCE = 5 V, f = 1 GHz 15 Gain Bandwidth Product fT (GHz) VCE = 3 V, f = 1 GHz 15 10 10 5 5 0 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 100 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e| 10 5 0 0.1 1 Frequency f (GHz) 10 2 VCE = 3 V, IC = 5 mA VCE = 3 V, IC = 30 mA MSG MAG MAG MSG MSG MAG MAG MSG Remark The graphs indicate nominal characteristics. 4 Data Sheet PU10765EJ02V0DS NESG210833 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 25 20 15 |S21e|2 10 5 0 0.1 1 Frequency f (GHz) 10 MSG MAG VCE = 5 V, IC = 5 mA 35 30 25 20 15 |S21e|2 10 5 0 0.1 1 Frequency f (GHz) 10 MSG INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 5 V, IC = 30 mA MAG MAG MSG MAG MSG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 20 VCE = 3 V, f = 1 GHz 15 |S21e|2 10 MSG MAG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 VCE = 5 V, f = 1 GHz 15 |S21e|2 MAG MSG 10 5 5 0 1 10 Collector Current IC (mA) 100 0 1 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. Data Sheet PU10765EJ02V0DS 5 NESG210833 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 4 VCE = 5 V, f = 1 GHz, ZS = ZSopt, ZL = 50 16 14 Associated Gain Ga (dB) OUTPUT 3RD ORDER INTERCEPT POINT vs. COLLECTOR CURRENT Output 3rd Order Intercept Point OIP3 (dBm) 40 VCE = 5 V, f1 = 1.000 GHz, f2 = 1.001 GHz Ga 12 10 Noise Figure NF (dB) 3 30 2 8 6 20 1 NF 4 2 10 0 1 10 Collector Current IC (mA) 0 100 0 1 10 Collector Current IC (mA) 100 30 VCE = 5 V, IC (set) = 40 mA , f = 1 GHz 400 Each Output Power Pout (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dB) OUTPUT POWER, LINEAR GAIN, COLLECTOR CURRENT vs. INPUT POWER EACH OUTPUT POWER, IM3 vs. EACH INPUT POWER 40 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -20 IM3 VCE = 5 V, IC (set) = 40 mA , f1 = 1.000 GHz, f2 = 1.001 GHz 0 10 20 30 Output Power Pout (dBm) Linear Gain GL (dB) 20 300 Pout Collector Current IC (mA) Pout 10 GL 200 0 IC -10 -20 -15 -10 -5 0 5 10 100 0 15 -10 Input Power Pin (dBm) Each Input Power Pin (each) (dBm) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.necel.com/microwave/en/ 6 Data Sheet PU10765EJ02V0DS NESG210833 PACKAGE DIMENSIONS 3-PIN MINIMOLD (33 PKG) (UNIT: mm) 2.80.2 0.4+0.1 -0.05 1.5 0.65+0.1 -0.15 R7C 1. Emitter 2. Base 3. Collector 0 to 0.1 0.95 2.90.2 2 0.95 1 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 0.16+0.1 -0.05 0.4+0.1 -0.05 3 Data Sheet PU10765EJ02V0DS 7 NESG210833 * The information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. In addition, NEC Electronics products are not taken measures to prevent radioactive rays in the product design. When customers use NEC Electronics products with their products, customers shall, on their own responsibility, incorporate sufficient safety measures such as redundancy, fire-containment and anti-failure features to their products in order to avoid risks of the damages to property (including public or social property) or injury (including death) to persons, as the result of defects of NEC Electronics products. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E0904E |
Price & Availability of NESG210833
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |